NTMFD5875NLT1G Details_NTMFD5875NLT1G PDF Document_ON Semiconductor-Galaxy Core City

MOSFETs - Arrays

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)
FET Type	2 N-Channel (Dual)
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	7A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs	33mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	5.9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	540pF @ 25V
Power - Max	3.2W (Ta), 32W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN
Supplier Device Package	8-DFN (5x6) Dual Flag (SO8FL-Dual)

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