BSD840N L6327 Details_BSD840N L6327 PDF Document_Infineon Technologies-Galaxy Core City

MOSFETs - Arrays

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Specifications

Description	Details
Series	OptiMOS™
Package	Tape & Reel (TR)
FET Type	2 N-Channel (Dual)
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	880mA
Rds On (Max) @ Id, Vgs	400mOhm @ 880mA, 2.5V
Vgs(th) (Max) @ Id	750mV @ 1.6µA
Gate Charge (Qg) (Max) @ Vgs	0.26nC @ 2.5V
Input Capacitance (Ciss) (Max) @ Vds	78pF @ 10V
Power - Max	500mW
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	6-VSSOP, SC-88, SOT-363
Supplier Device Package	PG-SOT363-6

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