NTMFD4901NFT3G Details_NTMFD4901NFT3G PDF Document_ON Semiconductor-Galaxy Core City

MOSFETs - Arrays

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)
FET Type	2 N-Channel (Dual), Schottky
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	10.3A, 17.9A
Rds On (Max) @ Id, Vgs	6.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	9.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	1150pF @ 15V
Power - Max	1.1W, 1.2W
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN
Supplier Device Package	8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)

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