NVMFD5C466NT1G Details_NVMFD5C466NT1G PDF Document_ON Semiconductor-Galaxy Core City

MOSFETs - Arrays

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)
FET Type	2 N-Channel (Dual)
FET Feature	Standard
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25°C	14A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs	8.1mOhm @ 15A, 10V
Vgs(th) (Max) @ Id	3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	11nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	650pF @ 25V
Power - Max	3W (Ta), 38W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN
Supplier Device Package	8-DFN (5x6) Dual Flag (SO8FL-Dual)

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