NTLJD2104PTAG Details_NTLJD2104PTAG PDF Document_ON Semiconductor-Galaxy Core City

MOSFETs - Arrays

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)
FET Type	2 P-Channel (Dual)
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	12V
Current - Continuous Drain (Id) @ 25°C	2.4A
Rds On (Max) @ Id, Vgs	90mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id	800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs	8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	467pF @ 6V
Power - Max	700mW
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	6-WDFN Exposed Pad
Supplier Device Package	6-WDFN (2x2)

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