FDC6432SH Details_FDC6432SH PDF Document_ON Semiconductor-Galaxy Core City

MOSFETs - Arrays

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Specifications

Description	Details
Series	PowerTrench®, SyncFET™
Package	Tape & Reel (TR)
FET Type	N and P-Channel
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	30V, 12V
Current - Continuous Drain (Id) @ 25°C	2.4A, 2.5A
Rds On (Max) @ Id, Vgs	90mOhm @ 2.4A, 10V
Vgs(th) (Max) @ Id	3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	3.5nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds	270pF @ 15V
Power - Max	700mW
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	SOT-23-6 Thin, TSOT-23-6
Supplier Device Package	SuperSOT™-6

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