PMDT290UCEH Details_PMDT290UCEH PDF Document_Nexperia USA Inc.-Galaxy Core City

MOSFETs - Arrays

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Specifications

Description	Details
Series	Automotive, AEC-Q101
Package	Tape & Reel (TR)
FET Type	N and P-Channel Complementary
FET Feature	Standard
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	800mA (Ta), 550mA (Ta)
Rds On (Max) @ Id, Vgs	380mOhm @ 500mA, 4.5V, 850mOhm @ 400mA, 4.5V
Vgs(th) (Max) @ Id	950mV @ 250µA, 1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	680pC, 1.14nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	83pF, 87pF @ 10V
Power - Max	330mW (Ta), 1.09W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	SOT-563, SOT-666
Supplier Device Package	SOT-666

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