IRF7341QTRPBF Details_IRF7341QTRPBF PDF Document_Infineon Technologies-Galaxy Core City

MOSFETs - Arrays

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Specifications

Description	Details
Series	*
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	2 N-Channel (Dual)
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	55V
Current - Continuous Drain (Id) @ 25°C	5.1A
Rds On (Max) @ Id, Vgs	50mOhm @ 5.1A, 10V
Vgs(th) (Max) @ Id	1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs	44nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	780pF @ 25V
Power - Max	2.4W
Operating Temperature	-
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package	8-SO

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