UP04979G0L Details_UP04979G0L PDF Document_Panasonic Electronic Components-Galaxy Core City

MOSFETs - Arrays

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	N and P-Channel
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	50V, 30V
Current - Continuous Drain (Id) @ 25°C	100mA
Rds On (Max) @ Id, Vgs	12Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id	1.5V @ 1µA
Gate Charge (Qg) (Max) @ Vgs	-
Input Capacitance (Ciss) (Max) @ Vds	-
Power - Max	125mW
Operating Temperature	125°C (TJ)
Mounting Type	Surface Mount
Package / Case	SOT-563, SOT-666
Supplier Device Package	SSMini6-F2

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