VEC2616-TL-W-Z Details_VEC2616-TL-W-Z PDF Document_ON Semiconductor-Galaxy Core City

MOSFETs - Arrays

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)
FET Type	N and P-Channel
FET Feature	Logic Level Gate, 4V Drive
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	3A, 2.5A
Rds On (Max) @ Id, Vgs	80mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id	2.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	10nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	505pF @ 20V
Power - Max	1W
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-SMD, Flat Lead
Supplier Device Package	SOT-28FL/VEC8

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