MCH6626-TL-E Details_MCH6626-TL-E PDF Document_ON Semiconductor-Galaxy Core City

MOSFETs - Arrays

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Specifications

Description	Details
Series	-
Package	Bulk
FET Type	N and P-Channel
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	1.6A, 1A
Rds On (Max) @ Id, Vgs	230mOhm @ 800mA, 4V
Vgs(th) (Max) @ Id	-
Gate Charge (Qg) (Max) @ Vgs	1.4nC @ 4V
Input Capacitance (Ciss) (Max) @ Vds	105pF @ 10V
Power - Max	800mW
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	6-SMD, Flat Leads
Supplier Device Package	6-MCPH

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