HAT2218R-EL-E Details_HAT2218R-EL-E PDF Document_Renesas Electronics America Inc-Galaxy Core City

MOSFETs - Arrays

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Specifications

Description	Details
Series	-
Package	Bulk
FET Type	2 N-Channel (Dual) Asymmetrical
FET Feature	Logic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	7.5A, 8A
Rds On (Max) @ Id, Vgs	24mOhm @ 3.75A, 10V
Vgs(th) (Max) @ Id	-
Gate Charge (Qg) (Max) @ Vgs	4.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	630pF @ 10V
Power - Max	1.5W
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package	8-SOP

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