APTMC120AM09CT3AG Details_APTMC120AM09CT3AG PDF Document_Microchip Technology-Galaxy Core City

MOSFETs - Arrays

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Specifications

Description	Details
Series	-
Package	Bulk
FET Type	2 N Channel (Phase Leg)
FET Feature	Silicon Carbide (SiC)
Drain to Source Voltage (Vdss)	1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C	295A (Tc)
Rds On (Max) @ Id, Vgs	9mOhm @ 200A, 20V
Vgs(th) (Max) @ Id	2.4V @ 40mA (Typ)
Gate Charge (Qg) (Max) @ Vgs	644nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds	11000pF @ 1000V
Power - Max	1250W
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Chassis Mount
Package / Case	SP3
Supplier Device Package	SP3

Other

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