TPCP8401(TE85L,F) Details_TPCP8401(TE85L,F) PDF Document_Toshiba Semiconductor and Storage-Galaxy Core City

MOSFETs - Arrays

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)
FET Type	N and P-Channel
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	20V, 12V
Current - Continuous Drain (Id) @ 25°C	100mA, 5.5A
Rds On (Max) @ Id, Vgs	3Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id	1.1V @ 100µA
Gate Charge (Qg) (Max) @ Vgs	-
Input Capacitance (Ciss) (Max) @ Vds	9.3pF @ 3V
Power - Max	1W
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-SMD, Flat Lead
Supplier Device Package	PS-8 (2.9x2.4)

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