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SI3588DV-T1-E3 Picture

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SI3588DV-T1-E3

  • Vishay Siliconix
  • New
  • MOSFET N/P-CH 20V 2.5A 6TSOP
  • Datasheet download
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In Stock:18,556(Ref. price)
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Documents
Specifications
DescriptionDetails
Series
TrenchFET®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type
N and P-Channel
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
20V
Current - Continuous Drain (Id) @ 25°C
2.5A, 570mA
Rds On (Max) @ Id, Vgs
80mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id
450mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs
7.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds
-
Power - Max
830mW, 83mW
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
SOT-23-6 Thin, TSOT-23-6
Supplier Device Package
6-TSOP
Other
Price advantage, SI3588DV-T1-E3 is available in stock and can be delivered on the same day
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