NTHD3100CT1 Details_NTHD3100CT1 PDF Document_ON Semiconductor-Galaxy Core City

MOSFETs - Arrays

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)
FET Type	N and P-Channel
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	2.9A, 3.2A
Rds On (Max) @ Id, Vgs	80mOhm @ 2.9A, 4.5V
Vgs(th) (Max) @ Id	1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	2.3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	165pF @ 10V
Power - Max	1.1W
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-SMD, Flat Lead
Supplier Device Package	ChipFET™

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