NTTFD2D8N03P1E Details_NTTFD2D8N03P1E PDF Document_ON Semiconductor-Galaxy Core City

MOSFETs - Arrays

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Specifications

Description	Details
Series	PowerTrench®
Package	Tape & Reel (TR)
FET Type	2 N-Channel (Dual)
FET Feature	Standard
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	16.1A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs	2.5mOhm @ 18A, 10V
Vgs(th) (Max) @ Id	3V @ 400µA
Gate Charge (Qg) (Max) @ Vgs	20.8nC @ 10V, 20.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	1500pF @ 15V, 1521pF @ 15V
Power - Max	1.04W (Ta), 26W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	12-PowerWQFN
Supplier Device Package	12-WQFN (3.3x3.3)

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