APTC90H12T2G Details_APTC90H12T2G PDF Document_Microsemi Corporation-Galaxy Core City

MOSFETs - Arrays

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Specifications

Description	Details
Series	CoolMOS™
Package	Tray
FET Type	4 N-Channel (H-Bridge)
FET Feature	Super Junction
Drain to Source Voltage (Vdss)	900V
Current - Continuous Drain (Id) @ 25°C	30A
Rds On (Max) @ Id, Vgs	120mOhm @ 26A, 10V
Vgs(th) (Max) @ Id	3.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs	270nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	6800pF @ 100V
Power - Max	250W
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Chassis Mount
Package / Case	SP2
Supplier Device Package	SP2

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