SIB911DK-T1-E3 Details_SIB911DK-T1-E3 PDF Document_Vishay Siliconix-Galaxy Core City

MOSFETs - Arrays

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Specifications

Description	Details
Series	TrenchFET®
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	2 P-Channel (Dual)
FET Feature	Standard
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	2.6A
Rds On (Max) @ Id, Vgs	295mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	4nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds	115pF @ 10V
Power - Max	3.1W
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	PowerPAK® SC-75-6L Dual
Supplier Device Package	PowerPAK® SC-75-6L Dual

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