CTLDM7120-M832DS TR Details_CTLDM7120-M832DS TR PDF Document_Central Semiconductor Corp-Galaxy Core City

MOSFETs - Arrays

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	2 N-Channel (Dual)
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	1A (Ta)
Rds On (Max) @ Id, Vgs	100mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id	1.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	2.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	220pF @ 10V
Power - Max	1.65W
Operating Temperature	-65°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-TDFN Exposed Pad
Supplier Device Package	TLM832DS

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