ALD212908ASAL Details_ALD212908ASAL PDF Document_Advanced Linear Devices Inc.-Galaxy Core City

MOSFETs - Arrays

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Specifications

Description	Details
Series	EPAD®, Zero Threshold™
Package	Tube
FET Type	2 N-Channel (Dual) Matched Pair
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	10.6V
Current - Continuous Drain (Id) @ 25°C	80mA
Rds On (Max) @ Id, Vgs	-
Vgs(th) (Max) @ Id	20mV @ 10µA
Gate Charge (Qg) (Max) @ Vgs	-
Input Capacitance (Ciss) (Max) @ Vds	-
Power - Max	500mW
Operating Temperature	0°C ~ 70°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package	8-SOIC

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