JAN2N7335 Details_JAN2N7335 PDF Document_Microsemi Corporation-Galaxy Core City

MOSFETs - Arrays

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Specifications

Description	Details
Series	Military, MIL-PRF-19500/599
Package	Bulk
FET Type	4 P-Channel
FET Feature	Standard
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	750mA
Rds On (Max) @ Id, Vgs	1.4Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	-
Input Capacitance (Ciss) (Max) @ Vds	-
Power - Max	1.4W
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	14-DIP (0.300", 7.62mm)
Supplier Device Package	-

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