MSCSM120AM11CT3AG Details_MSCSM120AM11CT3AG PDF Document_Microchip Technology-Galaxy Core City

MOSFETs - Arrays

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Specifications

Description	Details
Series	-
Package	Tube
FET Type	2 N Channel (Phase Leg)
FET Feature	Silicon Carbide (SiC)
Drain to Source Voltage (Vdss)	1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C	254A (Tc)
Rds On (Max) @ Id, Vgs	10.4mOhm @ 120A, 20V
Vgs(th) (Max) @ Id	2.8V @ 3mA
Gate Charge (Qg) (Max) @ Vgs	696nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds	9060pF @ 1000V
Power - Max	1.067kW (Tc)
Operating Temperature	-40°C ~ 175°C (TJ)
Mounting Type	Chassis Mount
Package / Case	Module
Supplier Device Package	SP3F

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