APTM50H15FT1G Details_APTM50H15FT1G PDF Document_Microchip Technology-Galaxy Core City

MOSFETs - Arrays

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Specifications

Description	Details
Series	-
Package	Bulk
FET Type	4 N-Channel (H-Bridge)
FET Feature	Standard
Drain to Source Voltage (Vdss)	500V
Current - Continuous Drain (Id) @ 25°C	25A
Rds On (Max) @ Id, Vgs	180mOhm @ 21A, 10V
Vgs(th) (Max) @ Id	5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	170nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	5448pF @ 25V
Power - Max	208W
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Chassis Mount
Package / Case	SP1
Supplier Device Package	SP1

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