NTND31225CZTAG Details_NTND31225CZTAG PDF Document_ON Semiconductor-Galaxy Core City

MOSFETs - Arrays

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Specifications

Description	Details
Series	Automotive, AEC-Q101
Package	Tape & Reel (TR)
FET Type	N and P-Channel Complementary
FET Feature	Standard
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	220mA (Ta), 127mA (Ta)
Rds On (Max) @ Id, Vgs	1.5Ohm @ 100mA, 4.5V, 5Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	-
Input Capacitance (Ciss) (Max) @ Vds	12.3pF @ 15V, 12.8pF @ 15V
Power - Max	125mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	6-XFLGA
Supplier Device Package	6-XLLGA (.90x.65)

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