NX1029X,115 Details_NX1029X,115 PDF Document_Nexperia USA Inc.-Galaxy Core City

MOSFETs - Arrays

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Specifications

Description	Details
Series	Automotive, AEC-Q101, TrenchMOS™
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	N and P-Channel
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	60V, 50V
Current - Continuous Drain (Id) @ 25°C	330mA, 170mA
Rds On (Max) @ Id, Vgs	7.5Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id	2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	0.35nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds	36pF @ 25V
Power - Max	500mW
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	SOT-563, SOT-666
Supplier Device Package	SOT-666

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