CAS300M12BM2 Details_CAS300M12BM2 PDF Document_Cree/Wolfspeed-Galaxy Core City

MOSFETs - Arrays

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Specifications

Description	Details
Series	Z-FET™
Package	Bulk
FET Type	2 N-Channel (Half Bridge)
FET Feature	Silicon Carbide (SiC)
Drain to Source Voltage (Vdss)	1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C	423A (Tc)
Rds On (Max) @ Id, Vgs	5.7mOhm @ 300A, 20V
Vgs(th) (Max) @ Id	2.3V @ 15mA (Typ)
Gate Charge (Qg) (Max) @ Vgs	1025nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds	11700pF @ 600V
Power - Max	1660W
Operating Temperature	150°C (TJ)
Mounting Type	Chassis Mount
Package / Case	Module, Screw Terminals
Supplier Device Package	Module

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