CAS100H12AM1 Details_CAS100H12AM1 PDF Document_Cree/Wolfspeed-Galaxy Core City

MOSFETs - Arrays

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Specifications

Description	Details
Series	Z-FET™
Package	Bulk
FET Type	2 N-Channel (Half Bridge)
FET Feature	Standard
Drain to Source Voltage (Vdss)	1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C	168A
Rds On (Max) @ Id, Vgs	20mOhm @ 20A, 20V
Vgs(th) (Max) @ Id	3.1V @ 50mA
Gate Charge (Qg) (Max) @ Vgs	-
Input Capacitance (Ciss) (Max) @ Vds	9500pF @ 800V
Power - Max	568W
Operating Temperature	-
Mounting Type	Chassis Mount
Package / Case	Module
Supplier Device Package	Module

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