DMG1016VQ-13 Details_DMG1016VQ-13 PDF Document_Diodes Incorporated-Galaxy Core City

MOSFETs - Arrays

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)
FET Type	N and P-Channel
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	870mA, 640mA
Rds On (Max) @ Id, Vgs	400mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	0.74nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	60.67pF @ 16V
Power - Max	530mW
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	SOT-563, SOT-666
Supplier Device Package	SOT-563

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