UPA2562T1H-T1-AT Details_UPA2562T1H-T1-AT PDF Document_Renesas Electronics America Inc-Galaxy Core City

MOSFETs - Arrays

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Specifications

Description	Details
Series	-
Package	Bulk
FET Type	2 N-Channel (Dual)
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	4.5A
Rds On (Max) @ Id, Vgs	55mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	5.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	475pF @ 10V
Power - Max	2.2W
Operating Temperature	-
Mounting Type	Surface Mount
Package / Case	8-SMD, Flat Lead
Supplier Device Package	8-VSOF

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