RM2003 Details_RM2003 PDF Document_Rectron USA-Galaxy Core City

MOSFETs - Arrays

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)
FET Type	N and P-Channel
FET Feature	Standard
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	3A (Ta)
Rds On (Max) @ Id, Vgs	35mOhm @ 3A, 4.5V, 75mOhm @ 2.5A, 4.5V
Vgs(th) (Max) @ Id	1.2V @ 250µA, 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	5nC @ 4.5V, 3.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	260pF @ 10V, 325pF @ 10V
Power - Max	800mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	SOT-23-6
Supplier Device Package	SOT-23-6

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