DMC1229UFDB-13 Details_DMC1229UFDB-13 PDF Document_Diodes Incorporated-Galaxy Core City

MOSFETs - Arrays

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)
FET Type	N and P-Channel
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	12V
Current - Continuous Drain (Id) @ 25°C	5.6A, 3.8A
Rds On (Max) @ Id, Vgs	29mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	19.6nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds	914pF @ 6V
Power - Max	1.4W
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	6-UDFN Exposed Pad
Supplier Device Package	U-DFN2020-6 (Type B)

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