VEC2415-TL-E Details_VEC2415-TL-E PDF Document_ON Semiconductor-Galaxy Core City

MOSFETs - Arrays

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Specifications

Description	Details
Series	-
Package	Bulk
FET Type	2 N-Channel (Dual)
FET Feature	Logic Level Gate, 4V Drive
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	3A (Ta)
Rds On (Max) @ Id, Vgs	80mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id	2.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	10nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	505pF @ 20V
Power - Max	900mW (Ta)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-SMD, Flat Lead
Supplier Device Package	SOT-28FL/ECH8

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