BSM400D12P2G003 Details_BSM400D12P2G003 PDF Document_Rohm Semiconductor-Galaxy Core City

MOSFETs - Arrays

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Specifications

Description	Details
Series	-
Package	Bulk
FET Type	2 N-Channel (Half Bridge)
FET Feature	Silicon Carbide (SiC)
Drain to Source Voltage (Vdss)	1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C	400A (Tc)
Rds On (Max) @ Id, Vgs	-
Vgs(th) (Max) @ Id	4V @ 85mA
Gate Charge (Qg) (Max) @ Vgs	-
Input Capacitance (Ciss) (Max) @ Vds	38000pF @ 10V
Power - Max	2450W (Tc)
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	-
Package / Case	Module
Supplier Device Package	Module

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