US6J11TR Details_US6J11TR PDF Document_Rohm Semiconductor-Galaxy Core City

MOSFETs - Arrays

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	2 P-Channel (Dual)
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	12V
Current - Continuous Drain (Id) @ 25°C	1.3A
Rds On (Max) @ Id, Vgs	260mOhm @ 1.3A, 4.5V
Vgs(th) (Max) @ Id	1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	2.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	290pF @ 6V
Power - Max	320mW
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	6-SMD, Flat Leads
Supplier Device Package	TUMT6

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