SSM6N357R,LF Details_SSM6N357R,LF PDF Document_Toshiba Semiconductor and Storage-Galaxy Core City

MOSFETs - Arrays

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	2 N-Channel (Dual)
FET Feature	Standard
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	650mA (Ta)
Rds On (Max) @ Id, Vgs	1.8Ohm @ 150mA, 5V
Vgs(th) (Max) @ Id	2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	1.5nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds	60pF @ 12V
Power - Max	1.5W (Ta)
Operating Temperature	150°C
Mounting Type	Surface Mount
Package / Case	6-SMD, Flat Leads
Supplier Device Package	6-TSOP-F

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