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SI4973DY-T1-GE3 Picture

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SI4973DY-T1-GE3

  • Vishay Siliconix
  • New
  • MOSFET 2P-CH 30V 5.8A 8SOIC
  • Datasheet download
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In Stock:20,662(Ref. price)
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Documents
Specifications
DescriptionDetails
Series
TrenchFET®
Package
Tape & Reel (TR)
FET Type
2 P-Channel (Dual)
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
5.8A
Rds On (Max) @ Id, Vgs
23mOhm @ 7.6A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
56nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
-
Power - Max
1.1W
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
8-SO
Other
Price advantage, SI4973DY-T1-GE3 is available in stock and can be delivered on the same day
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