CSD86360Q5D Details_CSD86360Q5D PDF Document_Texas Instruments-Galaxy Core City

MOSFETs - Arrays

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Specifications

Description	Details
Series	NexFET™
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	2 N-Channel (Half Bridge)
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	25V
Current - Continuous Drain (Id) @ 25°C	50A
Rds On (Max) @ Id, Vgs	-
Vgs(th) (Max) @ Id	2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	12.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	2060pF @ 12.5
Power - Max	13W
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-PowerLDFN
Supplier Device Package	8-LSON (5x6)

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