UPA2451BTL-E1-A Details_UPA2451BTL-E1-A PDF Document_Renesas Electronics America Inc-Galaxy Core City

MOSFETs - Arrays

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Specifications

Description	Details
Series	-
Package	Bulk
FET Type	2 N-Channel (Dual)
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	8.2A
Rds On (Max) @ Id, Vgs	20mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	9.2nC @ 4V
Input Capacitance (Ciss) (Max) @ Vds	540pF @ 10V
Power - Max	700mW
Operating Temperature	-
Mounting Type	Surface Mount
Package / Case	6-VFDFN Exposed Pad
Supplier Device Package	6-HWSON

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