CSD87333Q3D Details_CSD87333Q3D PDF Document_Texas Instruments-Galaxy Core City

MOSFETs - Arrays

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Specifications

Description	Details
Series	NexFET™
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	2 N-Channel (Dual) Asymmetrical
FET Feature	Logic Level Gate, 5V Drive
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	15A
Rds On (Max) @ Id, Vgs	14.3mOhm @ 4A, 8V
Vgs(th) (Max) @ Id	1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	4.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	662pF @ 15V
Power - Max	6W
Operating Temperature	125°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN
Supplier Device Package	8-VSON (3.3x3.3)

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