SSM6N42FE(TE85L,F) Details_SSM6N42FE(TE85L,F) PDF Document_Toshiba Semiconductor and Storage-Galaxy Core City

MOSFETs - Arrays

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	2 N-Channel (Dual)
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	800mA
Rds On (Max) @ Id, Vgs	240mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id	1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	90pF @ 10V
Power - Max	150mW
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	SOT-563, SOT-666
Supplier Device Package	ES6 (1.6x1.6)

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