RM2520ES6 Details_RM2520ES6 PDF Document_Rectron USA-Galaxy Core City

MOSFETs - Arrays

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)
FET Type	N and P-Channel
FET Feature	Standard
Drain to Source Voltage (Vdss)	25V, 20V
Current - Continuous Drain (Id) @ 25°C	1.1A (Ta), 800mA (Ta)
Rds On (Max) @ Id, Vgs	1.2Ohm @ 500mA, 4.5V, 600mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id	1V @ 250µA, 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	1.8pC @ 4.5V, 0.6pC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	87pF @ 10V, 30pF @ 10V
Power - Max	800mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	SOT-23-6
Supplier Device Package	SOT-23-6

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