FDPC1012S Details_FDPC1012S PDF Document_Fairchild Semiconductor-Galaxy Core City

MOSFETs - Arrays

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Specifications

Description	Details
Series	-
Package	Bulk
FET Type	2 N-Channel (Dual) Asymmetrical
FET Feature	Standard
Drain to Source Voltage (Vdss)	25V
Current - Continuous Drain (Id) @ 25°C	13A (Ta), 35A (Tc), 26A (Ta), 88A (Tc)
Rds On (Max) @ Id, Vgs	7mOhm @ 12A, 4.5V, 2.2mOhm @ 23A, 4.5V
Vgs(th) (Max) @ Id	2.2V @ 250µA, 2.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	8nC, 25nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	1075pF @ 13V, 3456pF @ 13V
Power - Max	800mW (Ta), 900mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-PowerWDFN
Supplier Device Package	Powerclip-33

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