LN100LA-G Details_LN100LA-G PDF Document_Microchip Technology-Galaxy Core City

MOSFETs - Arrays

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)
FET Type	2 N-Channel (Cascoded)
FET Feature	Standard
Drain to Source Voltage (Vdss)	1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C	-
Rds On (Max) @ Id, Vgs	3000Ohm @ 2mA, 2.8V
Vgs(th) (Max) @ Id	1.6V @ 10µA
Gate Charge (Qg) (Max) @ Vgs	-
Input Capacitance (Ciss) (Max) @ Vds	50pF @ 25V
Power - Max	350mW
Operating Temperature	-25°C ~ 125°C (TJ)
Mounting Type	Surface Mount
Package / Case	6-VFLGA
Supplier Device Package	6-LFGA (3x3)

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