STL20DN10F7 Details_STL20DN10F7 PDF Document_STMicroelectronics-Galaxy Core City

MOSFETs - Arrays

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Specifications

Description	Details
Series	DeepGATE™, STripFET™ VII
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	2 N-Channel (Dual)
FET Feature	Standard
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	20A
Rds On (Max) @ Id, Vgs	67mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id	4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	7.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	408pF @ 50V
Power - Max	62.5W
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-PowerVDFN
Supplier Device Package	PowerFlat™ (5x6)

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