KGF6N05D-400 Details_KGF6N05D-400 PDF Document_Renesas Electronics America Inc-Galaxy Core City

MOSFETs - Arrays

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Specifications

Description	Details
Series	-
Package	Bulk
FET Type	2 N-Channel (Dual) Common Source
FET Feature	Standard
Drain to Source Voltage (Vdss)	5.5V
Current - Continuous Drain (Id) @ 25°C	12A (Ta)
Rds On (Max) @ Id, Vgs	3mOhm @ 6A, 4.5V
Vgs(th) (Max) @ Id	0.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	4nC @ 3.5V
Input Capacitance (Ciss) (Max) @ Vds	630pF @ 5.5V
Power - Max	2.5W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	20-UFLGA, CSP
Supplier Device Package	20-WLCSP (2.48x1.17)

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