MSCSM120HM50CT3AG Details_MSCSM120HM50CT3AG PDF Document_Microchip Technology-Galaxy Core City

MOSFETs - Arrays

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Specifications

Description	Details
Series	-
Package	Tube
FET Type	4 N-Channel
FET Feature	Silicon Carbide (SiC)
Drain to Source Voltage (Vdss)	1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C	55A (Tc)
Rds On (Max) @ Id, Vgs	50mOhm @ 40A, 20V
Vgs(th) (Max) @ Id	2.7V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	137nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds	1990pF @ 1000V
Power - Max	245W (Tc)
Operating Temperature	-40°C ~ 175°C (TJ)
Mounting Type	Chassis Mount
Package / Case	Module
Supplier Device Package	SP3F

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