MAX8555ETB+T Details_MAX8555ETB+T PDF Document_Maxim Integrated-Galaxy Core City

MOSFETs - Arrays

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Specifications

Description	Details
Series	*
Package	Bulk
FET Type	-
FET Feature	-
Drain to Source Voltage (Vdss)	-
Current - Continuous Drain (Id) @ 25°C	-
Rds On (Max) @ Id, Vgs	-
Vgs(th) (Max) @ Id	-
Gate Charge (Qg) (Max) @ Vgs	-
Input Capacitance (Ciss) (Max) @ Vds	-
Power - Max	-
Operating Temperature	-
Mounting Type	-
Package / Case	-
Supplier Device Package	-

Other

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