STI19NM65N Details_STI19NM65N PDF Document_STMicroelectronics-Galaxy Core City

MOSFETs - Single

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Specifications

Description	Details
Series	MDmesh™ II
Package	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	15.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	270mOhm @ 7.75A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	55 nC @ 10 V
Vgs (Max)	±25V
Input Capacitance (Ciss) (Max) @ Vds	1900 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	150W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	I2PAK
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA

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