FDMA037N08LC Details_FDMA037N08LC PDF Document_ON Semiconductor-Galaxy Core City

MOSFETs - Single

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Specifications

Description	Details
Series	PowerTrench®
Package	Tape & Reel (TR)
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	80 V
Current - Continuous Drain (Id) @ 25°C	6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	36.5mOhm @ 4A, 10V
Vgs(th) (Max) @ Id	2.5V @ 20µA
Gate Charge (Qg) (Max) @ Vgs	9 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	595 pF @ 40 V
FET Feature	-
Power Dissipation (Max)	2.4W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	6-WDFN (2x2)
Package / Case	6-WDFN Exposed Pad

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